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4V Drive Nch MOSFET (Corresponds to AEC-Q101) - RSD100N10FRA

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RSD100N10FRATL Active CPT3 2500 2500 Taping Yes
 
Specifications:
Grade Automotive
Common Standard AEC-Q101
Package Code TO-252(DPAK)
JEITA Package SC-63
Package Size[mm] 6.5x9.5(t=2.3)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 100
Drain Current ID[A] 10.0
RDS(on)[Ω] VGS=4V(Typ.) 0.105
RDS(on)[Ω] VGS=4.5V(Typ.) 0.1
RDS(on)[Ω] VGS=10V(Typ.) 0.095
RDS(on)[Ω] VGS=Drive (Typ.) 0.105
Total gate charge Qg[nC] 18.0
Power Dissipation (PD)[W] 20.0
Drive Voltage[V] 4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · 4V-drive type
    · Nch Power MOSFET
    · Fast Switching Speed
    · Drive circuits can be simple
    · Parallel use is easy
    · Pb Free/RoHS Compliant
 
 
Pin Configuration:
Pin Configration
 
 
 
 
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors