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Nch 30V 20A Middle Power MOSFET - RS1E200BN

Middle Power MOSFET RS1E200BN is suitable for switching power supply.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RS1E200BNTB Active HSOP8(Single) 2500 2500 Taping Yes
 
Specifications:
Grade Standard
Package Code HSOP8S(5x6)
Package Size[mm] 5.0x6.0(t=1.0)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 80.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0038
RDS(on)[Ω] VGS=10V (Typ.) 0.0028
RDS(on)[Ω] VGS=Drive (Typ.) 0.0038
Total gate charge Qg[nC] 29.0
Power Dissipation (PD)[W] 25.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • ・ Low on - resistance.
    ・ High Power small mold Package (HSOP8).
    ・ Pb-free lead plating ; RoHS compliant
    ・ Halogen Free
 
 
Pin Configuration:
Pin Configration
 
 
 
 
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors