Nch 30V 8A Middle Power MOSFET - RQ3E080BN
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
|* This product is a STANDARD grade product and not recommend for on-vehicle devices.|
|Number of terminal||8|
|Drain-Source Voltage VDSS[V]||30|
|Drain Current ID[A]||8.0|
|RDS(on)[Ω] VGS=4.5V (Typ.)||0.016|
|RDS(on)[Ω] VGS=10V (Typ.)||0.011|
|RDS(on)[Ω] VGS=Drive (Typ.)||0.016|
|Total gate charge Qg[nC]||7.2|
|Power Dissipation (PD)[W]||2.0|
|Mounting Style||Surface mount|
|Storage Temperature (Min.)[°C]||-55|
|Storage Temperature (Max.)[°C]||150|
- Low on - resistance.
- High Power Package (HSMT8).
- Pb-free lead plating; RoHS compliant.
- Halogen Free
For Power Device
For Surface Mount Type
About TR Die Temperature
Before using ROHM Transistor