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Nch 40V 120A Power MOSFET - RJ1G12BGN (New)

RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RJ1G12BGNTLL Active LPT(L) 1000 1000 Taping Yes
 
Specifications:
Grade Standard
Package Code TO-263AB
Package Size[mm] 10.1x15.1(t=4.7)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 40
Drain Current ID[A] 120.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.00154
RDS(on)[Ω] VGS=10V (Typ.) 0.00138
RDS(on)[Ω] VGS=Drive (Typ.) 0.00154
Total gate charge Qg[nC] 82.0
Power Dissipation (PD)[W] 178.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
    • Low on - resistance
    • High power small mold package(LPTL)
    • Pb-free lead plating ; RoHS compliant
    • 100% UIS tested
 
 
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New Products:
 
ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors