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650V 40A Field Stop Trench IGBT - RGS80TS65D (New)

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

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Part number
Unit Quantity
Minimum Package Quantity
Packing Type
RGS80TS65DC11 Active TO-247N 450 30 Tube Yes
VCES [V] 650
IC(100°C)[A] 40
VCE(sat) (Typ.) [V] 1.65
Built-in Diode FRD
Pd [W] 272
VGE(th) (Min.)[V] 5.0
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
    • Low Collector - Emitter Saturation Voltage
    • Short Circuit Withstand Time 8μs
    • Qualified to AEC-Q101
    • Built in Very Fast & Soft Recovery FRD
    • Pb - free Lead Plating ; RoHS Compliant
ROHM Semiconductor reserves the right to change the specifications at any time.
Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation