Downloading...
 
product-image
 

4.5V Drive Nch MOSFET - RF4E110BN

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RF4E110BNTR Active HUML2020L8(Single) 3000 3000 Taping Yes
 
Specifications:
Grade Standard
Package Code DFN2020-8S
Package Size[mm] 2.0x2.0(t=0.6)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 11.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0118
RDS(on)[Ω] VGS=10V (Typ.) 0.0085
RDS(on)[Ω] VGS=Drive (Typ.) 0.0118
Total gate charge Qg[nC] 12.0
Power Dissipation (PD)[W] 2.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • ・ Low on - resistance.
    ・ High Power Small Mold Package (HUML2020L8).
    ・ Pb-free lead plating ; RoHS compliant
    ・ Halogen Free
 
 
 
 
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors