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10V Drive Nch Power MOSFET - RCJ080N25 (Under Development)

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RCJ080N25TL Under Development LPTS(D2PAK) 1000 1000 Taping Yes
 
Specifications:
Grade Standard
Package Code TO-263(D2PAK)
JEITA Package SC-83
Package Size[mm] 10.1x13.1(t=4.5)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 250
Drain Current ID[A] 8.0
RDS(on)[Ω] VGS=10V (Typ.) 0.46
RDS(on)[Ω] VGS=Drive (Typ.) 0.46
Total gate charge Qg[nC] 15.0
Power Dissipation (PD)[W] 35.0
Drive Voltage[V] 10.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • ・ Low on-resistance.
    ・ Fast switching speed.
    ・ Drive circuits can be simple.
    ・ Parallel use is easy.
    ・ Pb-free lead plating ; RoHS compliant
    ・ 100% Avalanche tested
 
 
Pin Configuration:
Pin Configration
 
 
 
ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors