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10V Drive Nch MOSFET - R6076ENZ1

R6076ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance .

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
R6076ENZ1C9 Active TO-247 450 450 Bulk Yes
 
Specifications:
Grade Standard
Package Code TO-247
Package Size[mm] 21.1x15.9(t5.0)
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 600
Drain Current ID[A] 76.0
RDS(on)[Ω] VGS=10V (Typ.) 0.038
RDS(on)[Ω] VGS=Drive (Typ.) 0.038
Total gate charge Qg[nC] 260.0
Power Dissipation (PD)[W] 120.0
Drive Voltage[V] 10.0
Mounting Style Leaded type
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • 1) Low on-resistance.
    2) Fast switching speed.
    3) Gate-source voltage(VGSS)guaranteed to be ±30V.
    4) Drive circuits can be simple.
    5) Parallel use is easy.
    6) Pb-free lead plating; RoHS compliant.
 
 
 
 
Technical Data
Reference Circuit

PFC Bridge-Less1 Pin=10kW

Reference Circuit

PFC Bridge-Less1 Pin=15kW

SPICE Simulation Evaluation Circuit Data

PFC Bridge-Less1 Pin=10kW

SPICE Simulation Evaluation Circuit Data

PFC Bridge-Less1 Pin=15kW

NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors