10V Drive Nch MOSFET - R6004ENJ
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
|* This product is a STANDARD grade product and not recommend for on-vehicle devices.|
|Series||Generation 2nd SJMOS Low Noise|
|Number of terminal||3|
|Drain-Source Voltage VDSS[V]||600|
|Drain Current ID[A]||4.0|
|RDS(on)[Ω] VGS=10V (Typ.)||0.9|
|RDS(on)[Ω] VGS=Drive (Typ.)||0.9|
|Total gate charge Qg[nC]||15.0|
|Power Dissipation (PD)[W]||40.0|
|Mounting Style||Surface mount|
|Storage Temperature (Min.)[°C]||-55|
|Storage Temperature (Max.)[°C]||150|
- ・ Low on-resistance.
・ Fast switching speed.
・ Gate-source voltage (VGSS) guaranteed to be ±20V.
・ Drive circuits can be simple.
・ Parallel use is easy.
・ Pb-free lead plating ; RoHS compliant
For Power Device
For Surface Mount Type
About TR Die Temperature
Before using ROHM Transistor