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2.5V Drive Nch+SBD MOSFET - QS5U17

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
QS5U17TR Active TSMT5 3000 3000 Taping Yes
 
Specifications:
Grade Standard
Package Code SOT-25T
Package Size[mm] 2.9x2.8(t=1.0Max.)
Number of terminal 5
Polarity Nch+Schottky
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 2.0
RDS(on)[Ω] VGS=2.5V (Typ.) 0.11
RDS(on)[Ω] VGS=4V (Typ.) 0.076
RDS(on)[Ω] VGS=4.5V (Typ.) 0.071
RDS(on)[Ω] VGS=Drive (Typ.) 0.11
Total gate charge Qg[nC] 2.8
Power Dissipation (PD)[W] 0.9
Drive Voltage[V] 2.5
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 1.0
Forward Current Surge Peak IFSM (Diode) [A] 3.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · Multiple Schottky Barrier Diodes Middle Power MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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New Products:
 
 
Technical Data
NE Handbook Series

For Power Device

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors