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PNP Low VCE(sat) Transistor + NPN General Purpose Amplification Transistor - EMZ8

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
EMZ8T2R Active EMT6 8000 8000 Taping Yes
 
Specifications:
Grade Standard
Package Code SOT-563
JEITA Package SC-107C
Package Size[mm] 1.6x1.6(t=0.5)
Number of terminal 6
Polarity NPN+PNP
Collector-Emitter voltage VCEO1[V] 50.0
Collector current(continuous) IC1[A] 0.15
Collector-Emitter voltage VCEO2[V] -12.0
Collector current(continuous) IC2[A] -0.5
hFE 120 to 680
hFE (Min.) 120
hFE (Max.) 680
Mounting Style Surface mount
Equivalent (Single Part) 2SA2018 / 2SC2412K
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · Ultra-compact complex bipolar transistor
    · For pre-amplifier
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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New Products:
 
 
Technical Data
NE Handbook Series

For Power Device

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors