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SiC Power Module - BSM300D12P2E001

BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
BSM300D12P2E001 Active E 4 4 Tray Yes
 
Specifications:
Drain-source Voltage[V] 1200
Drain Current[A] 300.0
Total Power Dissipation[W] 1875
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
Features:
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
 
 
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Technical Data
SPICE Simulation Evaluation Circuit Data

DC-DC Half-Bridge CCCV Charger Po=50kW

SPICE Simulation Evaluation Circuit Data

DC-DC Half-Bridge CCCV Charger Po=50kW (for Thermal evaluation)

SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog