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Silicon carbide Power Module - BSM180D12P3C007

BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
BSM180D12P3C007 Active C 12 12 Tray Yes
 
Specifications:
Drain-source Voltage[V] 1200
Drain Current[A] 180.0
Total Power Dissipation[W] 880
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
Features:
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
 
 
Pin Configuration:
Pin Configration
 
 
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Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog