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Silicon carbide Power Module - BSM180D12P2C101

Half bridge module consisting of ROHM SiC-DMOSFETs.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
BSM180D12P2C101 Active C 12 12 Tray Yes
 
Specifications:
Drain-source Voltage[V] 1200
Drain Current[A] 180.0
Total Power Dissipation[W] 1130
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
Features:
  • ・SiC MOSFET-only power module
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
    ・Low body diode Qrr and trr
 
 
Pin Configuration:
Pin Configration
 
 
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Technical Data
SPICE Simulation Evaluation Circuit Data

DC-AC Half-Bridge Ih Inverter Po=20kW

SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog