Silicon carbide Power Module - BSM180C12P2E202 (New)

BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, ubdyctuib heating equipment.

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Please contact us for purchase because there is no distribution Inventory.--- inquiry

* This product is a STANDARD grade product and not recommend for on-vehicle devices.

Part number	Status	Package	Unit Quantity	Minimum Package Quantity	Packing Type	RoHS
BSM180C12P2E202	Active	E	4	4	Tray	Yes

Specifications:

Common Standard	-
Drain-source Voltage[V]	1200
Drain Current[A]	204.0
Total Power Dissipation[W]	1360
Junction Temperature(Max.)[°C]	175
Storage Temperature (Min.)[°C]	-40
Storage Temperature (Max.)[°C]	125
Package	Chopper

Features:

- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.

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ROHM Semiconductor reserves the right to change the specifications at any time.

Technical Data

PLECS Model

For SiC Power Devices and Modules

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog