Cell Balance LSI of 4 to 6 Series Power Storage Element Cells for Automotive - BD14000EFV-C(H2)

BD14000EFV-C is a LSI IC designed as a self-controlled cell balancer. It has a built-in shunt-type power storage element balancer function that can respond to 4 to 6 cells. All the functions necessary in a cell balancer are built-in making power storage element cell balancing possible only in this LSI. This chip can be used for electric double layer capacitors (EDLC) with cell detection voltage range of 2.4V to 3.1V and power storage capacitors which is important for cell balancers with similar electrical characteristics It has a built-in multiple over-voltage detection function and can also detect abnormal mode such as any characteristic deterioration in cells. Also, application-dependent operation can be set since enable control is possible.

BD14000EFV-CH2 is small 250pcs reel. Standard Reel (2,000pcs) is available.→BD14000EFV-CE2

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Part number
Unit Quantity
Minimum Package Quantity
Packing Type
BD14000EFV-CH2 Active HTSSOP-B30 250 250 Taping Yes
Grade Automotive
Common Standard AEC-Q100
Supply Voltage(Min.)[V] 8.0
Supply Voltage(Max.)[V] 24.0
ON Resistance [mΩ] 1
Cell Voltage Detection (Min.)[V] 2.4
Cell Voltage Detection (Max.)[V] 3.1
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 105
Package HTSSOP-B30
    • AEC-Q100 qualified
    • All EDLC cell balancer functions are integrated on a single chip
    • Self- controlled EDLC balance function
    • Adopts shunt resistance method for simple balancing
    • 4 to 6 cell series connection ready
    • Multiple chip series connection is possible
    • Built-in over-voltage detection flag output
    • Detection voltage can be set
Other New/Updated Products Relating to Power Management
PART NUMBER Product Name Package Datasheet Distribution Inventory
BD14000EFV-C Cell Balance LSI of 4 to 6 Series Power Storage Element Cells for Automotive HTSSOP-B30   Buy Sample
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Technical Data
Thermal Resistance

The definition and how to use thermal resistance and thermal characterization parameter of packages for ROHM’s integrated circuit are described in this application note.