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Nch 40V 30A Power MOSFET - AG009DGQ3 (Under Development)

Automotive Power MOSFET AG009DGQ3 realize the high mounting reliability by ROHM original terminal and plating treatment.

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RoHS
AG009DGQ3TB Under Development HSMT8AG 3000 3000 Taping Yes
 
Specifications:
Grade Automotive
Common Standard AEC-Q101
Package Size[mm] 3.3x3.3(t=0.8)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 40
Drain Current ID[A] 30.0
RDS(on)[Ω] VGS=4.5V(Typ.) 0.0073
RDS(on)[Ω] VGS=10V(Typ.) 0.0060
RDS(on)[Ω] VGS=Drive (Typ.) 0.0073
Total gate charge Qg[nC] 15.0
Power Dissipation (PD)[W] 75.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
    • Small high-powered package reduces mounting area by 36% at a maximum
    • Realization of high mounting reliability by original terminal and plating treatment
    • Assuring Tj=175℃
    • AEC-Q101 Qualified
 
 
 
ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors