ROHM Expands its Range of Power Devices to
Offer Complete Power Solutions
New lines include latest SiC based technologies and
Si based IGBT devices for enhanced energy efficiency.
ROHM Semiconductor will debut its latest power product designs at PCIM, the leading trade fair for Power Electronics, Intelligent Motion and Energy Management in Nuremberg, from May 16 – 18, 2017 (Hall 9, Booth 316).
Energy savings and reduced system costs in all kinds of systems are heavily influenced by choosing the right power device. With its new developments resulting from the group's extensive research and design initiatives, ROHM is able to offer customers not only a full line-up of efficient, compact products for their applications, but also a complete solution for the power channel. ROHM will show power semiconductor solutions with 5 categories as ‘SiC', ‘Power IC', ‘Automotive', 'Industrial' and ‘Motor Drive',
The new series of Isolated Gate Driver ICs for power MOSFETs expands the existing portfolio, offers new solutions to increase the flexibility and improves the design of industrial and automotive power systems. The first released product of this series is a 3,75KV isolation, AEC-Q100 gate driver device specifically designed to drive a SiC power MOSFET. It has an output current of 4A, a built-in active miller clamping to prevent parasitic turn on effects and integrates an under-voltage lock-out (UVLO) optimised to drive ROHM's SiC MOSFET. The optimized UVLO improves the reliability of the system – a very sensitive topic in Automotive and Industrial applications. Moreover the integration of this function minimises the external BOM, reducing the PCB layout space and design effort.
The new 1200V 400A and 600A full SiC power modules incorporate latest SiC SBDs and MOSFETs with a new low inductance structure. The provided function of good flatness baseplate allows reducing the thermal resistance value between module-case and heatsink which enables a smaller size of the cooling system. These properties make them ideal replacements for 400, 600A and even 1000A Si IGBT-based Power Modules, depending on customers' switching frequency.
Based on thinner wafer, field stop and a sophisticated proprietary Trench Gate structure technologies, ROHM's new 650V IGBTs are overcoming the trade-off between saturation voltage and turn-off loss characteristics. On top of this, measurement results show low noise performance while keeping higher switching speed. The new generation includes two variants: The RGTV series with advanced short circuit safety, as well as the RGW series for converters with a low gate charge, capacitance and extremely low switching loss. Both are integrated with a very fast and soft recovery FRD, providing optimum efficiency to applications.
For people interested in details of the new technologies, ROHM staff members will give various presentations in several areas of the fair ground:
Hall 6, Booth 143
Benefits and reliability of SiC devices for industrial and automotive applications'
Presentation by Dr. Ino
Hall 6, Booth 326
‘SiC solutions for eMobility'
Presentation by Mr. Hüskens, Mr. Enomoto
Hall 7, Booth 507
‘Potential of SiC for automotive applications'
Presentation by Mr. Mashaly
Hall 6, Booth 143
Topic: "SiC – Design, EMC and Measurement"
Presentation by Dr. Scarpa