ROHM Semiconductor Presents New Efficiency Levels with Latest 3rd Generation SiC Technology

SiC MOSFETs, SiC SBDs, SiC Modules: Advanced Structures provide
higher power density reliability, and greater energy efficiencies

Willich-Münchheide/Munich, November 8th, 2016 – At the world's leading show for electronics, electronica in Munich (Nov. 8-11, 2016/Hall A5-Booth 542) ROHM Semiconductor presents its 3rd Gen of SiC MOSFETs, SiC Schottky Barrier Diodes (SBDs) and SiC modules. The new devices successfully address the needs of efficient power delivery and are key solutions to reduce loss issues during power conversion. ROHM, a pioneer in SiC development, was the first to successfully mass produce SiC MOSFETs in 2010 and continues to lead the industry in developing products that aim for further power loss reductions.

3rd Generation SiC MOSFETs

ROHM is now mass-producing the industry's first trench-type SiC MOSFETs. ROHM's new generation of SiC MOSFETs reduces ON-resistance by 50% across the entire temperature range and input capacitance by 35% in the same chip size compared with planar gate-type SiC MOSFETs. Optimum performance is achieved by combining exceedingly low loss with high-speed switching performance. This also makes it possible to reduce the size of peripheral components such as coils and capacitors by increasing switching frequency. As a result, conversion efficiency is improved, contributing to miniaturisation, weight reduction, and greater energy efficiencies. The new SCT3080KL 1200V SiC MOSFET series in a TO-247 package serves as a perfect example.

Portfolio of 3rd Gen SiC MOSFETs

650V Part No 17mΩ 22mΩ 30mΩ 60mΩ 80mΩ 120mΩ
TO-247 SCT3xxxAL
1200V P/N Part No 22mΩ 30mΩ 40mΩ 80mΩ 160mΩ
TO-247 SCT3xxxAL

In addition, ROHM will offer AECQ qualified SiC MOSFET based on 2nd Gen planar series.

3rd Generation SiC Schottky Barrier Diodes (SBD)

The 3rd Gen of SiC Schottky Barrier Diodes (SBD) realise lowest forward voltage (VF) and lowest reverse leakage current (lR) over the entire temperature range among all of the SiC SBDs currently available on the market. In addition to this, they feature high surge current capability which is ideal for power supply applications. Adding to the recently announced TO220AC devices at 650V/6, 8 and 10A, ROHM introduces D2PAK and TO220FM devices also adding lower current options, 2A and 4A to the family.

SiC diodes exhibit ultra-short reverse recovery time compared with silicon-based devices which basically makes them ideal for high speed switching.

Overall, these features contribute to the ongoing trend of high efficiency, high power density and highly robust designs.

Portfolio of 3rd Gen SiC SBDs

650V Part No 2A 4A 6A 8A 10A

Chopper type Full SiC Modules

ROHM's new full SiC modules including chopper type modules for converters integrate both, mass-produced Trench SiC MOSFETs and SiC SBDs. In addition to 2 in 1 type modules, 1200V/120A,180A and 300A Chopper type modules are being prepared for fulfillment of market requirements. In addition to this, ROHM is working on new power module which is having lower stray inductance.

Portfolio of SiC Modules

Internal circuit BVDSS ID max Part No
2 in 1
1200V 80A BSM080D12P2C008
1200V 120A BSM120D12P2C005
1200V 180A BSM180D12P3C007
1200V 300A BSM300D12P2E001
Chopper 1200V 120A BSM120C12P2C201
1200V 180A BSM180C12P3C202
1200V 300A BSM300C12P3E201

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ROHM Semiconductor Presents New Efficiency Levels with Latest 3rd Generation SiC Technology

ROHM Semiconductor Presents New Efficiency Levels with Latest 3rd Generation SiC Technology