ROHM Introduces New Isolated Gate Drivers for High-speed Switching

High reliability and high efficiency devices in a super compact package for inverter and converter applications

ROHM Semiconductor introduces new gate drivers featuring a super compact package with built-in isolation by combining the company's original Bi-CDMOS technology with innovative proprietary ‘On-chip transformer' technology. The devices come in two different line-ups, the BM6001x family for easy designs and the more complex BM610xFV family offering comprehensive protection functionalities. Each family provides high-efficiency, low power operating and high speed switching capacity.

In accordance with the generation of new applications and markets, global power-demand has been increasing constantly and energy-saving has become essential in equipment design. Therefore, high efficiency of inverter and converter circuits has become indispensable especially in power supply and motor drives requiring high-power conversion. In addition, recent developments include design-upgrades to improve efficiency by utilizing high-frequency circuits for Solar-inverters, Hi-power UPS systems, cellular base-station power supplies, fuel-cell systems and railway power converters, which actuate the demand for gate-drivers with isolation. However, gate driver circuits with conventional photo-couplers for power devices such as SiC and IGBT deployed in high power applications have shown inferior high-temperature and low speed properties limiting the potential especially of these devices.

In response to this, ROHM has developed gate drivers that can maximize the performance of SiC, IGBT and power MOSFETs due to built-in isolators.

Based on an inductive coupling mechanism, the technology provides great flexibility of the isolation structure, high noise immunity while providing low differential impedance to the signal. The optimized isolator design prevents vulnerability to external magnetic fields.

Since ROHM adapted this isolation technology together with a low voltage interface chip and a high voltage gate driver chip within a compact multi-chip IC package the mounting-area was reduced by about 50% compared to conventional photo-coupler circuits, contributing to downsize inverter and converter implementation while augmenting their reliability.

 

Key Features BM6104FV

  • Complex type
  • Isolation function integrated using proprietary coreless transformer technology
  • Original circuit design utilized for high CMR dV/dt > 100kV/μs
  • 2.5 kVrms isolation voltage
  • <150ns I/O delay time
  • Minimum Pulse width 90ns
  • Gate Current Output 3A (min.)
  • INA/INB Inputs to prevent false switching
  • Active Miller Clamp
  • Under voltage lockout function
  • DESAT feature
  • Short cut & temperature protection
  • Soft Turn-off (adjustable)
  • Fault Condition Output
  • Supports negative power supplies

 

Key Features BM60014FV

  • Simple type for easy design-in and quick product development
  • Isolation function integrated using proprietary coreless transformer technology
  • Original circuit design utilized for high CMR dV/dt > 100kV/μs
  • 2.5 kVrms isolation voltage (3.75 kVrms with BM60015FV)
  • 95 – 120 ns delay time
  • 70ns minimum input pulse
  • Gate Current Output 3A (min.)
  • INA/INB Inputs to prevent false switching
  • Under voltage lockout function
  • DESAT features
  • Active Miller Clamp

 

Availability

Both families are available.