• Why is there undershoot/overshoot of the gate signal during SiC device drive?
    • The effects of parasitic capacitance and inductance on the board can be considered a type of LC resonance. Please confirm the following items.
      1) External resistance connected to the gate drive circuit
      2) Output capacitance of the gate drive circuit
      3) Parasitic inductance of the gate drive circuit wiring
      4) SiC MOSFET gate capacitance
      5) Internal gate resistance of hte SiC MOSFET etc.
      When the resistance is small the overshoot/undershoot peak value will increase and prolong the ringing decay time.
      Also, when the capacitance is large the peak value deceases, slowing down the switching speed.
      Plus, a larger inductance will cause the inductance to rise.
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