RQ3E120BN
Nch 30V 21A Power MOSFET
RQ3E120BN
RQ3E120BN
Nch 30V 21A Power MOSFET
High power package RQ3E120BN is middle power MOSFET for switching application.
Data Sheet
Buy
*
Sample
*
* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
HSMT8 (3.3x3.3)
Applications
Switching, Motor
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
21
RDS(on)[Ω] VGS=4.5V(Typ.)
0.0086
RDS(on)[Ω] VGS=10V(Typ.)
0.0066
RDS(on)[Ω] VGS=Drive (Typ.)
0.0086
Total gate charge Qg[nC]
14
Power Dissipation (PD)[W]
16
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4012
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
3.3x3.3 (t=0.8)
Features:
- Low on - resistance.
- High Power Package (HSMT8).
- Pb-free lead plating; RoHS compliant.
- Halogen Free
