Thin-Film Piezoelectric MEMS
ROHM has conducted R&D over many years, focusing on technological innovation using ferroelectrics. Utilizing in-house highreliability production equipment that leverages market-proven ferroelectric technology and a heterogeneous material management system allows ROHM to integrate Thin-Film Piezoelectric MEMS and IC microfabrication technologies. In addition, joint development with customers will make it possible to achieve next-generation solutions featuring breakthrough miniaturization with unprecedented energy-savings and performance.
High-performance Thin-Film Piezoelectric Deposition Technology
ROHM's proprietary Sol-gel deposition technology of PZT thin lm has achieved a lm thickness uniformity of 2.0 m ±2.5%.
|PZT Film Thickness Range||2.5%|
|Piezoelectric Constant d31||-190pm/V|
|Dielectric Loss, tanδ||0.02～0.03|
Handling and Donding Technology for Ultra-thin Wafers Up to 100 m
- Bonding possible at low temperatures (even at 60℃)
- ±3m alignment accuracy
- Fully automated system improves production efciency
Silicon Deep Etching Technology
Selectivity Against Other Oxide Films
Selectivity at which etching has stopped at an oxide lm thickness of 0.5 m.Si/SiO2=230
Etching of notch-free shape of a 200 m deep hole at an angle of 90.5°.