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Complex Transistor(BIP+BIP) - VT6T12

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
VT6T12T2R Active VMT6 8000 8000 Taping sim
 
especificações:
Grade Standard
Package Code VMT6
JEITA Package SC-105B
Package Size[mm] 1.2x1.2(t=0.5)
Number of terminal 6
Polarity PNP+PNP
Collector-Emitter voltage VCEO1[V] -50.0
Collector current(continuous) IC1[A] -0.1
hFE 120 to 560
hFE (Min.) 120
hFE (Max.) 560
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Compact complex bipolar power transistor
    · For current mirror circuit
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors