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1.2V Drive Nch+Nch MOSFET - VT6K1

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
VT6K1T2CR Active VMT6 8000 8000 Taping sim
 
especificações:
Grade Standard
Package Code VMT6
JEITA Package SC-105B
Package Size[mm] 1.2x1.2(t=0.5)
Number of terminal 6
Polarity Nch+Nch
Drain-Source Voltage VDSS[V] 20
Drain Current ID[A] 0.1
RDS(on)[Ω] VGS=1.2V (Typ.) 6.0
RDS(on)[Ω] VGS=1.5V (Typ.) 4.5
RDS(on)[Ω] VGS=2.5V (Typ.) 3.0
RDS(on)[Ω] VGS=4.5V (Typ.) 2.5
RDS(on)[Ω] VGS=Drive (Typ.) 6.0
Power Dissipation (PD)[W] 0.15
Drive Voltage[V] 1.2
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Low voltage(1.2V) drive type
    · Nch+Nch Small-signal MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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Dados técnicos
NE Handbook Series

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Operation Notes

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Operation Notes

Before using ROHM Transistor

Taping Specifications

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Storage Conditions

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Condition Of Soldering

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Part Explanation

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