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1.2V Drive Pch+Pch MOSFET - VT6J1

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
VT6J1T2CR Active VMT6 8000 8000 Taping sim
 
especificações:
Grade Standard
Package Code VMT6
JEITA Package SC-105B
Package Size[mm] 1.2x1.2(t=0.5)
Number of terminal 6
Polarity Pch+Pch
Drain-Source Voltage VDSS[V] -20
Drain Current ID[A] -0.1
RDS(on)[Ω] VGS=1.2V (Typ.) 10.0
RDS(on)[Ω] VGS=1.5V (Typ.) 6.0
RDS(on)[Ω] VGS=2.5V (Typ.) 3.4
RDS(on)[Ω] VGS=4.5V (Typ.) 2.5
RDS(on)[Ω] VGS=Drive (Typ.) 10.0
Power Dissipation (PD)[W] 0.15
Drive Voltage[V] -1.2
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Low voltage(1.2V) drive type
    · Pch+Pch Small-signal MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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New Products:
 
 
Dados técnicos
NE Handbook Series

For Power Device

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Part Explanation

For Transistors