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Complex Transistor(BIP+BIP) - US6X8

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
US6X8TR Active TUMT6 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code SOT-363T
JEITA Package SC-113DA
Package Size[mm] 2.0x2.1(t=0.85max.)
Number of terminal 6
Polarity NPN+NPN
Collector-Emitter voltage VCEO1[V] 30.0
Collector current(continuous) IC1[A] 1.0
Collector-Emitter voltage VCEO2[V] 30.0
Collector current(continuous) IC2[A] 1.0
hFE 270 to 680
hFE (Min.) 270
hFE (Max.) 680
Mounting Style Surface mount
Equivalent (Single Part) 2SD2675 / 2SD2675
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Compact complex bipolar power transistor
    · For driver
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors