Complex Transistor(BIP+BIP) - US6T9

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
Constituição Lista de Materiais
US6T9TR Active TUMT6 3000 3000 Taping inquiry sim
Grade Standard
Package Code SOT-363T
JEITA Package SC-113DA
Package Size[mm] 2.0x2.1(t=0.85max.)
Number of terminal 6
Polarity PNP+PNP
Collector-Emitter voltage VCEO1[V] -30.0
Collector current(continuous) IC1[A] -1.0
Collector-Emitter voltage VCEO2[V] -30.0
Collector current(continuous) IC2[A] -1.0
hFE 270 to 680
hFE (Min.) 270
hFE (Max.) 680
Mounting Style Surface mount
Equivalent (Single Part) 2SB1710 / 2SB1710
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
  • · Compact complex bipolar power transistor
    · For driver
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors