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2.5V Drive Pch+SBD MOSFET - US5U30

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
US5U30TR Active TUMT5 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity Pch+Schottky
Drain-Source Voltage VDSS[V] -20
Drain Current ID[A] -1.0
RDS(on)[Ω] VGS=2.5V (Typ.) 0.57
RDS(on)[Ω] VGS=4V (Typ.) 0.31
RDS(on)[Ω] VGS=4.5V (Typ.) 0.28
RDS(on)[Ω] VGS=Drive (Typ.) 0.57
Total gate charge Qg[nC] 2.1
Power Dissipation (PD)[W] 0.7
Drive Voltage[V] -2.5
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.5
Forward Current Surge Peak IFSM (Diode) [A] 2.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Multiple Schottky Barrier Diodes Middle Power MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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New Products:
 
 
Dados técnicos
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Part Explanation

For Transistors