Downloading...
Não recomendado para New Design

Complex Transistor(BIP+Diode) - US5L12

 
Recommended Products
N / D
 
 
especificações:
número de peça US5L12TR
Estado de Condição NRND
pacote TUMT5
Quantidade Unidade 3000
Quantidade mínima Package 3000
tipo de embalagem Taping
Constituição Lista de Materiais inquiry
RoHS sim
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity NPN+Di
Collector-Emitter voltage VCEO1[V] 30.0
Collector current(continuous) IC1[A] 1.0
Collector Power dissipation PC[W] 0.4
hFE 270 to 680
hFE (Min.) 270
hFE (Max.) 680
hFE (Diode) 25
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.7
Forward Current Surge Peak IFSM (Diode) [A] 3.0
Mounting Style Surface mount
Equivalent (Single Part) 2SB1689 / RB461F
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Pin Configuração:
Pin Configration
 
 
Dados técnicos
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors