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Complex Transistor (BIP+BIP) - UMT1N

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
UMT1NTN Active UMT6 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code SOT-363
JEITA Package SC-88
Package Size[mm] 2.0x2.1(t=0.9)
Number of terminal 6
Polarity PNP+PNP
Collector-Emitter voltage VCEO1[V] -50.0
Collector current(continuous) IC1[A] -0.15
Collector-Emitter voltage VCEO2[V] -50.0
Collector current(continuous) IC2[A] -0.15
hFE 120 to
hFE (Min.) 120
Mounting Style Surface mount
Equivalent (Single Part) 2SA1037AK / 2SA1037AK
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Ultra-compact complex bipolar transistor
    · For pre-amplifier
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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New Products:
 
 
Dados técnicos
NE Handbook Series

For Power Device

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors