Complex Transistor(BIP+Diode) - UML6N

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Data Sheet

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Additional Information

FAQ

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.

número de peça	Estado de Condição	pacote	Quantidade Unidade	Quantidade mínima Package	tipo de embalagem	RoHS
UML6NTR	Active	UMT5	3000	3000	Taping	sim

especificações:

Grade	Standard
Package Code	SOT-353
JEITA Package	SC-88A
Package Size[mm]	2.0x2.1(t=0.9)
Number of terminal	5
Polarity	NPN+Di
Collector-Emitter voltage VCEO1[V]	12.0
Collector current(continuous) IC1[A]	0.5
hFE	270 to 680
hFE (Min.)	270
hFE (Max.)	680
Reverse voltage VR (Diode) [V]	30.0
Forward Current Surge Peak IFSM (Diode) [A]	1.0
Mounting Style	Surface mount
Equivalent (Single Part)	2SC5585 / RB521S-30
Storage Temperature (Min.)[°C]	-55
Storage Temperature (Max.)[°C]	125

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características:

· Ultra-compact complex bipolar transistor
· For DC-DC converter
· Small Surface Mount Package
· Pb Free/RoHS Compliant

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