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Complex Transistor(BIP+DTR) - UMF5N

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
UMF5NTR Active UMT6 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code SOT-363
JEITA Package SC-88
Package Size[mm] 2.0x2.1(t=0.9)
Number of terminal 6
Polarity BIP_PNP+DTR_NPN
Supply voltage VCC 1[V] 50.0
Collector current IC 1[A] 0.1
Input resistance R1 1[kΩ] 47.0
Emitter base Resistance R2 1[kΩ] 47.0
hFE 68 to
Collector-Emitter voltage VCEO1[V] -12.0
Collector current(continuous) IC1[A] -0.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · Ultra-compact complex bipolar transistor
    · Built-In Biasing Resistors
    · For power management
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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Dados técnicos
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors