4V Drive Nch+Pch MOSFET - TT8M11

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
Constituição Lista de Materiais
TT8M11TCR Active TSST8 3000 3000 Taping inquiry sim
Grade Standard
Package Code TSST8
Package Size[mm] 3.0x1.9(t=0.8)
Number of terminal 8
Polarity Nch+Pch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 3.0
RDS(on)[Ω] VGS=4V (Typ.) 0.078
RDS(on)[Ω] VGS=4.5V (Typ.) 0.067
RDS(on)[Ω] VGS=10V (Typ.) 0.051
RDS(on)[Ω] VGS=Drive (Typ.) 0.078
Total gate charge Qg[nC] 2.5
Power Dissipation (PD)[W] 1.25
Drive Voltage[V] 4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
  • · 4V-drive type
    · Nch+Pch Middle-power MOSFET
    · Fast Switching Speed
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
Pin Configuração:
Pin Configration
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors