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SiC MOSFET MUSIC SERIES - SCTMU001F

400V 20A N-channel SiC power MOSFET for Audio

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
SCTMU001FC Active TO-220AB 1000 50 Tube sim
 
especificações:
Drain-source Voltage[V] 400
Drain-source On-state Resistance(Typ.)[mΩ] 120
Drain Current[A] 20.0
Total Power Dissipation[W] 132
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • ・ Low on-resistance
    ・ Fast switching speed
    ・ Fast reverse recovery
    ・ Easy to parallel
    ・ Simple to drive
    ・ Pb-free lead plating ; RoHS compliant
 
 
Pin Configuração:
Pin Configration
 
 
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Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET