N-channel Silicon Carbide Power MOSFET - SCT3120AL

SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.

número de peça	Estado de Condição	pacote	Quantidade Unidade	Quantidade mínima Package	tipo de embalagem	RoHS
SCT3120ALGC11	Active	TO-247N	450	30	Tube	sim

especificações:

Drain-source Voltage[V]	650
Drain-source On-state Resistance(Typ.)[mΩ]	120
Drain Current[A]	21.0
Total Power Dissipation[W]	103
Junction Temperature(Max.)[°C]	175
Storage Temperature (Min.)[°C]	-55
Storage Temperature (Max.)[°C]	175

características:

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