Downloading...
N-channel Silicon Carbide Power MOSFET - SCT3120ALSCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
| ||||
* This product is a STANDARD grade product and not recommend for on-vehicle devices. |
especificações:
Common Standard | - |
Drain-source Voltage[V] | 650 |
Drain-source On-state Resistance(Typ.)[mΩ] | 120 |
Drain Current[A] | 21.0 |
Total Power Dissipation[W] | 103 |
Junction Temperature(Max.)[°C] | 175 |
Storage Temperature (Min.)[°C] | -55 |
Storage Temperature (Max.)[°C] | 175 |
características:
- ・ Low on-resistance
・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
PRODUTOS RELACIONADOS
Outros Novo / Atualizado produtos em relação aSiC Power Devices
Número de peça | Nome do Produto | Pacote | Datasheet | Inventário de distribuição |
---|---|---|---|---|
SCT3080AL | N-channel Silicon Carbide Power MOSFET | TO-247N | comprar | |
SCT2H12NY | N-channel Silicon Carbide Power MOSFET | TO-268-2L | comprar | |
SCT2750NY | N-channel Silicon Carbide Power MOSFET | TO-268-2L | comprar | |
SCT3017AL | N-channel Silicon Carbide Power MOSFET | TO-247N | inquérito | |
SCT3022AL | N-channel Silicon Carbide Power MOSFET | TO-247N | comprar | |
SCT3022KL | N-channel Silicon Carbide Power MOSFET | TO-247N | comprar |
New Products:
Dados técnicos
SPICE Simulation Evaluation Circuit
Circuit data for device evaluation
For SiC Power Devices and Modules
SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...
NE Handbook Series
For Power Device
Product Catalog File
SiC Power Device Catelog
Part Explanation
For SiC MOSFET