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N-channel Silicon Carbide Power MOSFET - SCT3120AL (New)

SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Additional Information  
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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
SCT3120ALGC11 Active TO-247N 450 30 Tube sim
 
especificações:
Drain-source Voltage[V] 650
Drain-source On-state Resistance(Typ.)[mΩ] 120
Drain Current[A] 21.0
Total Power Dissipation[W] 103
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
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características:
  • ・ Low on-resistance
    ・ Fast switching speed
    ・ Fast reverse recovery
    ・ Easy to parallel
    ・ Simple to drive
    ・ Pb-free lead plating ; RoHS compliant
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ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
 
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Spice Model

Thermal Model

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET