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N-channel Silicon Carbide Power MOSFET - SCT3120AL

SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
SCT3120ALGC11 Active TO-247N 450 30 Tube sim
 
especificações:
Common Standard -
Drain-source Voltage[V] 650
Drain-source On-state Resistance(Typ.)[mΩ] 120
Drain Current[A] 21.0
Total Power Dissipation[W] 103
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
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características:
  • ・ Low on-resistance
    ・ Fast switching speed
    ・ Fast reverse recovery
    ・ Easy to parallel
    ・ Simple to drive
    ・ Pb-free lead plating ; RoHS compliant
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Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Spice Model

Thermal Model

For SiC Power Devices and Modules

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET