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N-channel Silicon Carbide Power MOSFET - SCT3080AL (New)

650V 30A N-channel SiC (Silicon Carbide) power MOSFET.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
SCT3080ALGC11 Active TO-247N 450 30 Tube sim
 
especificações:
Drain-source Voltage[V] 650
Drain-source On-state Resistance(Typ.)[mΩ] 80
Drain Current[A] 30.0
Total Power Dissipation[W] 134
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
  • ・ Low on-resistance
    ・ Fast switching speed
    ・ Fast reverse recovery
    ・ Easy to parallel
    ・ Simple to drive
    ・ Pb-free lead plating ; RoHS compliant
 
ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
 
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET