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Silicon carbide Schottky Barrier Diode - SCS308AP (New)

Switching loss reduced, enabling high-speed switching . (3-pin package)

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
SCS308APC9 Active TO-220ACP 1000 50 Tube sim
 
especificações:
Grade Standard
Reverse Voltage[V] 650
Continuous Forward Current[A] 8
Total Power Dissipation[W] 57
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
    • Shorter recovery time
    • Reduced temperature dependence
    • High-speed switching possible
    • High surge current capability
 
 
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ROHM Semiconductor reserva-se o direito de alterar as especificações a qualquer momento.
 
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC Schottky Barrier Diodes