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Silicon carbide Schottky Barrier Diode for Automotive - SCS230AE2HR

Switching loss reduced, enabling high-speed switching . (2-pin package)

número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
SCS230AE2HRC Active TO-247 360 30 Tube sim
 
especificações:
Grade Automotive
Common Standard AEC-Q101
Reverse Voltage[V] 650
Continuous Forward Current[A] 30
Total Power Dissipation[W] 230
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
    • AEC-Q101 qualified
    • Shorter recovery time
    • High-speed switching possible
    • Reduced temperature dependence
 
 
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC Schottky Barrier Diodes