SiC Schottky Barrier Diode - SCS212AJ

Switching loss reduced, enabling high-speed switching . (4-pin package)

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
SCS212AJTLL Active TO-263AB (LPTL) 1000 1000 Taping sim
Grade Standard
Reverse Voltage[V] 650
Continuous Forward Current[A] 12
Total Power Dissipation[W] 88
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
  • ・Shorter recovery time
    ・Reduced temperature dependence
    ・High-speed switching possible
New Products:
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC Schottky Barrier Diodes