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SiC MOSFET - SCH2080KE

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
SCH2080KEC Active TO-247 360 30 Tube sim
 
especificações:
Common Standard -
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mΩ] 80
Drain Current[A] 40.0
Total Power Dissipation[W] 262
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
  • ・High-speed switching
    ・Low ON resistance
    ・Low body diode Qrr and trr
    ・Ensured reliability of body diode conduction
    ・SiC SBD co-packed
 
 
Pin Configuração:
Pin Configration
 
 
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New Products:
 
 
Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

For SiC Power Devices and Modules

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET