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SiC MOSFET - SCH2080KE

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
SCH2080KEC Active TO-247 360 30 Tube sim
 
especificações:
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mΩ] 80
Drain Current[A] 40.0
Total Power Dissipation[W] 262
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
  • ・High-speed switching
    ・Low ON resistance
    ・Low body diode Qrr and trr
    ・Ensured reliability of body diode conduction
    ・SiC SBD co-packed
 
 
Pin Configuração:
Pin Configration
 
 
Cliques recentes:
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Dados técnicos
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET