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SiC Schottky Barrier Diode Bare Die - S6304

S6201 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation.
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FAQ 
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
S6304 Active sim
 
especificações:
Reverse Voltage[V] 1200
Continuous Forward Current[A] 20
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
  • · Shorter recovery time
    · Reduced temperature dependence
    · High-speed switching possible
 
 
Dados técnicos
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC SBD Bare Die