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SiC Schottky Barrier Diode Bare Die - S6205

S6201 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

FAQ 
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
S6205 Active sim
 
especificações:
Reverse Voltage[V] 650
Continuous Forward Current[A] 12
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
  • · Shorter recovery time
    · Reduced temperature dependence
    · High-speed switching possible
 
 
PRODUTOS RELACIONADOS
Outros Novo / Atualizado produtos em relação aSiC Power Devices
Número de peça Nome do Produto Pacote Datasheet Inventário de distribuição
S6201 SiC Schottky Barrier Diode Bare Die   inquérito
S6202 SiC Schottky Barrier Diode Bare Die   inquérito
S6203 SiC Schottky Barrier Diode Bare Die   inquérito
S6204 SiC Schottky Barrier Diode Bare Die   inquérito
S6207 SiC Schottky Barrier Diode Bare Die   inquérito
S6301 SiC Schottky Barrier Diode Bare Die   inquérito
New Products:
 
 
Dados técnicos
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC SBD Bare Die