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SiC Schottky Barrier Diode Bare Die - S6203

S6201 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

FAQ 
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
S6203 Active sim
 
especificações:
Reverse Voltage[V] 650
Continuous Forward Current[A] 20
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
características:
  • · Shorter recovery time
    · Reduced temperature dependence
    · High-speed switching possible
 
 
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Dados técnicos
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC SBD Bare Die