SiC Schottky Barrier Diode Bare Die - S6201

S6201 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
S6201 Active sim
Reverse Voltage[V] 650
Continuous Forward Current[A] 6
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
  • · Shorter recovery time
    · Reduced temperature dependence
    · High-speed switching possible
Dados técnicos
Application Note

For SiC Power Devices and Modules

Product Catalog File

SiC Power Device Catelog

NE Handbook Series

For Power Device

Part Explanation

For SiC SBD Bare Die