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N-channel Silicon Carbide power MOSFETbare die - S4108
S4108 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices. |
especificações:
Common Standard | - |
Drain-source Voltage[V] | 1200 |
Drain-source On-state Resistance(Typ.)[mO] | 80 |
Drain Current[A] | 31.0 |
Junction Temperature(Max.)[°C] | 175 |
Storage Temperature (Min.)[°C] | -55 |
Storage Temperature (Max.)[°C] | 175 |
características:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
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Dados técnicos
For SiC Power Devices and Modules
SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...
NE Handbook Series
For Power Device
Product Catalog File
SiC Power Device Catelog
Part Explanation
For SiC MOSFET Bare Die