N-channel Silicon Carbide power MOSFETbare die - S4108 (New)

S4108 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
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Constituição Lista de Materiais
S4108 Active inquiry sim
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mO] 80
Drain Current[A] 31.0
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
    • Low on-resistance
    • Fast switching speed
    • Fast reverse recovery
    • Easy to parallel
    • Simple to drive
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Dados técnicos
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET Bare Die