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N-channel Silicon Carbide power MOSFETbare die - S4108

S4108 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

FAQ 
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
S4108 Active sim
 
especificações:
Common Standard -
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mO] 80
Drain Current[A] 31.0
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
mais
características:
    • Low on-resistance
    • Fast switching speed
    • Fast reverse recovery
    • Easy to parallel
    • Simple to drive
mais
 
 
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Dados técnicos
Spice Model

For SiC Power Devices and Modules

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET Bare Die