N-channel Silicon Carbide power MOSFETbare die - S4003

S4003 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
S4003 Active sim
Drain-source Voltage[V] 650
Drain-source On-state Resistance(Typ.)[mO] 17
Drain Current[A] 118.0
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
    • Low on-resistance
    • Fast switching speed
    • Fast reverse recovery
    • Easy to parallel
    • Simple to drive
Dados técnicos
Application Note

For SiC Power Devices and Modules

Product Catalog File

SiC Power Device Catelog

NE Handbook Series

For Power Device

Part Explanation

For SiC MOSFET Bare Die