N-channel SiC power MOSFET Bare Die - S2306

S2306 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
Constituição Lista de Materiais
S2306 Active inquiry sim
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mO] 160
Drain Current[A] 22.0
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
  • · Low ON resistance
    · Fast switching speed
    · Fast revese recovery
    · Easy to parallel
    · Simple to drive
Pin Configuração:
Pin Configration
Cliques recentes:
Outros Novo / Atualizado produtos em relação aSiC Power Devices
New Products:
Dados técnicos
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET Bare Die