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4V Drive Nch MOSFET - RT1E060XN

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

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Please contact us for purchase because there is no distribution Inventory.--- inquérito
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
número de peça
Estado de Condição
pacote
Quantidade Unidade
Quantidade mínima Package
tipo de embalagem
RoHS
RT1E060XNTCR Active TSST8 3000 3000 Taping sim
 
especificações:
Grade Standard
Package Code TSST8
Package Size[mm] 3.0x1.9(t=0.8)
Applications Switching
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 6.0
RDS(on)[Ω] VGS=4V (Typ.) 0.023
RDS(on)[Ω] VGS=4.5V (Typ.) 0.021
RDS(on)[Ω] VGS=10V (Typ.) 0.016
RDS(on)[Ω] VGS=Drive (Typ.) 0.023
Total gate charge Qg[nC] 6.8
Power Dissipation (PD)[W] 1.25
Drive Voltage[V] 4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
características:
  • · 4V-drive type
    · Nch Middle-power MOSFET
    · Fast Switching Speed
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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Dados técnicos
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Taping Specifications

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