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Não recomendado para New Design

1.5V Drive Nch MOSFET - RT1C060UN

 
Recommended Products
N / D
 
 
especificações:
número de peça RT1C060UNTR
Estado de Condição NRND
pacote TSST8
Quantidade Unidade 3000
Quantidade mínima Package 3000
tipo de embalagem Taping
Constituição Lista de Materiais inquiry
RoHS sim
Grade Standard
Package Code TSST8
Package Size[mm] 3.0x1.9(t=0.8)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 20
Drain Current ID[A] 6.0
RDS(on)[Ω] VGS=1.5V (Typ.) 0.033
RDS(on)[Ω] VGS=2.5V (Typ.) 0.024
RDS(on)[Ω] VGS=4.5V (Typ.) 0.02
RDS(on)[Ω] VGS=Drive (Typ.) 0.033
Total gate charge Qg[nC] 11.0
Power Dissipation (PD)[W] 1.25
Drive Voltage[V] 1.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Pin Configuração:
Pin Configration
 
 
Dados técnicos
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors